The substrate temperature dependent electrical properties of titanium dioxide thin films
Date
2010Source Title
Journal of Materials Science: Materials in Electronics
Print ISSN
0957-4522
Volume
21
Issue
7
Pages
692 - 697
Language
English
Type
ArticleItem Usage Stats
133
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115
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Abstract
Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical resistivity measurements showed that three types of conduction channels contribute to conduction mechanism in the temperature range of 13-320 K. The temperature dependence of electrical resistivity between 150 and 320 K indicated that electrical conductioninthe films was controlled by potential barriers caused by depletion of carriers at grain boundaries. The conduction mechanism of the films was shifted from grain boundary scattering dominated band conduction to the nearest neighbor hopping conduction at temperatures between 55 and 150 K. Below 55 K, the temperature dependence of electrical resistivity shows variable range hopping conduction. The correlation between the substrate temperature and resistivity behaviorisdiscussed by analyzing the physical plausibility of the hopping parameters and material properties derived by applying different conduction models. With these analyses, various electrical parameters of the present samples such as barrier height, donor concentration, density of states at the Fermi level, acceptor concentration and compensation ratio were determined. Their values as a function of substrate temperature were compared. © Springer Science+Business Media, LLC 2009.
Keywords
Acceptor concentrationsBand conduction
Barrier heights
Compensation ratio
Conduction channel
Conduction Mechanism
Conduction models
DC sputtering
Density of state
Donor concentrations
Electrical parameter
Electrical property
Electrical resistivity
Electrical resistivity measurements
Grain boundary scattering
Heated glass substrates
Hopping parameters
Material property
Nearest neighbor hopping
Potential barriers
Substrate temperature
Temperature dependence
Temperature range
Titanium dioxide thin film
Variable-range hopping conduction
Electric conductivity
Electric network analysis
Grain boundaries
Grain size and shape
Models
Oxides
Temperature distribution
Thin films
Titanium
Titanium dioxide
Substrates
Permalink
http://hdl.handle.net/11693/22273Published Version (Please cite this version)
http://dx.doi.org/10.1007/s10854-009-9979-zCollections
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