The substrate temperature dependent electrical properties of titanium dioxide thin films
Journal of Materials Science: Materials in Electronics
692 - 697
Item Usage Stats
Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical resistivity measurements showed that three types of conduction channels contribute to conduction mechanism in the temperature range of 13-320 K. The temperature dependence of electrical resistivity between 150 and 320 K indicated that electrical conductioninthe films was controlled by potential barriers caused by depletion of carriers at grain boundaries. The conduction mechanism of the films was shifted from grain boundary scattering dominated band conduction to the nearest neighbor hopping conduction at temperatures between 55 and 150 K. Below 55 K, the temperature dependence of electrical resistivity shows variable range hopping conduction. The correlation between the substrate temperature and resistivity behaviorisdiscussed by analyzing the physical plausibility of the hopping parameters and material properties derived by applying different conduction models. With these analyses, various electrical parameters of the present samples such as barrier height, donor concentration, density of states at the Fermi level, acceptor concentration and compensation ratio were determined. Their values as a function of substrate temperature were compared. © Springer Science+Business Media, LLC 2009.
Density of state
Electrical resistivity measurements
Grain boundary scattering
Heated glass substrates
Nearest neighbor hopping
Titanium dioxide thin film
Variable-range hopping conduction
Electric network analysis
Grain size and shape
Published Version (Please cite this version)http://dx.doi.org/10.1007/s10854-009-9979-z
Showing items related by title, author, creator and subject.
Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S. (2009)The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ...
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Ozcelik, S.; Özbay, Ekmel; Balkan, N. (Springer, 2009-12-03)The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ...
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures Arslan, E.; Şafak, Y.; Taşçioğlu, I.; Uslu, H.; Özbay, Ekmel (Elsevier, 2010)The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage ...