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      The substrate temperature dependent electrical properties of titanium dioxide thin films

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      Author(s)
      Yildiz, A.
      Lisesivdin, S.B.
      Kasap, M.
      Mardare, D.
      Date
      2010
      Source Title
      Journal of Materials Science: Materials in Electronics
      Print ISSN
      0957-4522
      Volume
      21
      Issue
      7
      Pages
      692 - 697
      Language
      English
      Type
      Article
      Item Usage Stats
      133
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      115
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      Abstract
      Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical resistivity measurements showed that three types of conduction channels contribute to conduction mechanism in the temperature range of 13-320 K. The temperature dependence of electrical resistivity between 150 and 320 K indicated that electrical conductioninthe films was controlled by potential barriers caused by depletion of carriers at grain boundaries. The conduction mechanism of the films was shifted from grain boundary scattering dominated band conduction to the nearest neighbor hopping conduction at temperatures between 55 and 150 K. Below 55 K, the temperature dependence of electrical resistivity shows variable range hopping conduction. The correlation between the substrate temperature and resistivity behaviorisdiscussed by analyzing the physical plausibility of the hopping parameters and material properties derived by applying different conduction models. With these analyses, various electrical parameters of the present samples such as barrier height, donor concentration, density of states at the Fermi level, acceptor concentration and compensation ratio were determined. Their values as a function of substrate temperature were compared. © Springer Science+Business Media, LLC 2009.
      Keywords
      Acceptor concentrations
      Band conduction
      Barrier heights
      Compensation ratio
      Conduction channel
      Conduction Mechanism
      Conduction models
      DC sputtering
      Density of state
      Donor concentrations
      Electrical parameter
      Electrical property
      Electrical resistivity
      Electrical resistivity measurements
      Grain boundary scattering
      Heated glass substrates
      Hopping parameters
      Material property
      Nearest neighbor hopping
      Potential barriers
      Substrate temperature
      Temperature dependence
      Temperature range
      Titanium dioxide thin film
      Variable-range hopping conduction
      Electric conductivity
      Electric network analysis
      Grain boundaries
      Grain size and shape
      Models
      Oxides
      Temperature distribution
      Thin films
      Titanium
      Titanium dioxide
      Substrates
      Permalink
      http://hdl.handle.net/11693/22273
      Published Version (Please cite this version)
      http://dx.doi.org/10.1007/s10854-009-9979-z
      Collections
      • Department of Physics 2397
      • Nanotechnology Research Center (NANOTAM) 1063
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