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      Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

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      Author
      Ceylan, A.
      Rumaiz, A. K.
      Caliskan, D.
      Ozcan, S.
      Özbay, Ekmel
      Woicik, J. C.
      Date
      2015
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Publisher
      A I P Publishing LLC
      Volume
      117
      Issue
      10
      Pages
      105303-1 - 105303-5
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA. © 2015 AIP Publishing LLC.
      Keywords
      Scanning electron microscopy
      Metal oxides
      X-ray diffraction
      Semiconductor device fabrication
      Atomic properties
      X-ray photoelectron spectroscopy
      Thin films
      Nanoclusters
      Chemical elements
      Nanocrystals
      Permalink
      http://hdl.handle.net/11693/22270
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4914522
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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