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dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorTasli, P.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzturk, M.en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:57:45Z
dc.date.available2016-02-08T09:57:45Z
dc.date.issued2010-05-08en_US
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/11693/22265
dc.description.abstractWe present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field (0-1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a two-dimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrödinger- Poisson equations.en_US
dc.language.isoEnglishen_US
dc.source.titleThin Solid Filmsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.tsf.2010.04.120en_US
dc.subjectHall effecten_US
dc.subjectIndium aluminum nitrideen_US
dc.subjectMetal organic chemical vapor depositionen_US
dc.subjectTwo dimensional electron gasen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.titleDouble subband occupation of the two-dimensional electron gas in InxAl1-XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrieren_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage5572en_US
dc.citation.epage5575en_US
dc.citation.volumeNumber518en_US
dc.citation.issueNumber19en_US
dc.identifier.doi10.1016/j.tsf.2010.04.120en_US
dc.publisherElsevieren_US
dc.contributor.bilkentauthorÖzbay, Ekmel


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