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      Double subband occupation of the two-dimensional electron gas in InxAl1-XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrier

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      Author(s)
      Lisesivdin, S. B.
      Tasli, P.
      Kasap, M.
      Ozturk, M.
      Arslan, E.
      Ozcelik, S.
      Özbay, Ekmel
      Date
      2010-05-08
      Source Title
      Thin Solid Films
      Print ISSN
      0040-6090
      Publisher
      Elsevier
      Volume
      518
      Issue
      19
      Pages
      5572 - 5575
      Language
      English
      Type
      Article
      Item Usage Stats
      136
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      Abstract
      We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field (0-1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a two-dimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrödinger- Poisson equations.
      Keywords
      Hall effect
      Indium aluminum nitride
      Metal organic chemical vapor deposition
      Two dimensional electron gas
      Metallorganic chemical vapor deposition
      Permalink
      http://hdl.handle.net/11693/22265
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.tsf.2010.04.120
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
      • Nanotechnology Research Center (NANOTAM) 1063
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