Double subband occupation of the two-dimensional electron gas in InxAl1-XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrier
Author
Lisesivdin, S. B.
Tasli, P.
Kasap, M.
Ozturk, M.
Arslan, E.
Ozcelik, S.
Özbay, Ekmel
Date
2010-05-08Source Title
Thin Solid Films
Print ISSN
0040-6090
Publisher
Elsevier
Volume
518
Issue
19
Pages
5572 - 5575
Language
English
Type
ArticleItem Usage Stats
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Abstract
We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field (0-1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a two-dimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrödinger- Poisson equations.
Keywords
Hall effectIndium aluminum nitride
Metal organic chemical vapor deposition
Two dimensional electron gas
Metallorganic chemical vapor deposition