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      Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures

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      Author
      Arslan, E.
      Şafak, Y.
      Taşçioğlu, I.
      Uslu, H.
      Özbay, Ekmel
      Date
      2010
      Source Title
      Microelectronic Engineering
      Print ISSN
      0167-9317
      Publisher
      Elsevier
      Volume
      87
      Issue
      10
      Pages
      1997 - 2001
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε'), dielectric loss (ε' '), loss tangent (tand), σ ac and the real and imaginary part of the electric modulus (M' and M' ') were found to be a strong function of frequency and temperature. A decrease in the values of ε' and ε' ' was observed, in which they both showed an increase in frequency and temperature. The values of M' and M' ' increase with increasing frequency and temperature. The σ ac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the e' and σ ac. © 2009 Elsevier B.V. All rights reserved.
      Keywords
      (Ni/Au)/Al xGa 1-xN/AlN/GaN
      AC electrical conductivity
      Dielectric properties
      Electric modulus
      Heterostructures
      Passivation
      AC electrical conductivity
      Capacitance voltage
      Conductance-voltage measurements
      Electric modulus
      Experimental values
      Function of frequency
      Imaginary parts
      Interface states density
      Interfacial polarization
      Loss tangent
      Low frequency
      Temperature dependence
      Dielectric losses
      Dielectric properties
      Gallium
      Heterojunctions
      Passivation
      Solid state physics
      Electric properties
      Permalink
      http://hdl.handle.net/11693/22202
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.mee.2009.12.067
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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