Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
Author
Arslan, E.
Şafak, Y.
Taşçioğlu, I.
Uslu, H.
Özbay, Ekmel
Date
2010Source Title
Microelectronic Engineering
Print ISSN
0167-9317
Publisher
Elsevier
Volume
87
Issue
10
Pages
1997 - 2001
Language
English
Type
ArticleItem Usage Stats
152
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Abstract
The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε'), dielectric loss (ε' '), loss tangent (tand), σ ac and the real and imaginary part of the electric modulus (M' and M' ') were found to be a strong function of frequency and temperature. A decrease in the values of ε' and ε' ' was observed, in which they both showed an increase in frequency and temperature. The values of M' and M' ' increase with increasing frequency and temperature. The σ ac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the e' and σ ac. © 2009 Elsevier B.V. All rights reserved.
Keywords
(Ni/Au)/Al xGa 1-xN/AlN/GaNAC electrical conductivity
Dielectric properties
Electric modulus
Heterostructures
Passivation
AC electrical conductivity
Capacitance voltage
Conductance-voltage measurements
Electric modulus
Experimental values
Function of frequency
Imaginary parts
Interface states density
Interfacial polarization
Loss tangent
Low frequency
Temperature dependence
Dielectric losses
Dielectric properties
Gallium
Heterojunctions
Passivation
Solid state physics
Electric properties
Permalink
http://hdl.handle.net/11693/22202Published Version (Please cite this version)
http://dx.doi.org/10.1016/j.mee.2009.12.067Collections
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