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      Capacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer

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      Author
      Turut, A.
      Karabulut, A.
      Ejderha, K.
      Bıyıklı, Necmi
      Date
      2015
      Source Title
      Materials Research Express
      Print ISSN
      2053-1591
      Publisher
      Institute of Physics Publishing
      Volume
      2
      Issue
      4
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      High-k Al2O3 with metallic oxide thickness of about 3 nmon n-type GaAs substrate has been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed the Au-Ti/Al2O3/n-GaAs MIS structures. It has been seen that the MIS structure exhibits excellent capacitance-voltage (C-V) and current-voltage (I-V) properties at 300 K. The saturation current of the forward bias and reverse bias I-V characteristics was the same value. An ideality factor value of 1.10 has been obtained from the forward bias I-V characteristics. The C-Vcharacteristics of the structure have shown almost no hysteresis from +3 Vto -10 Vwith frequency as a parameter. The reverse biasC-V curves have exhibited a behavior without frequency dispersion and almost hysteresis at each frequency from 10 kHz to 1000 kHz.
      Keywords
      Atomic layer dedeposition
      High dielectric material
      MIS devices
      Permalink
      http://hdl.handle.net/11693/22181
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/2053-1591/2/4/046301
      Collections
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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