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      Ta/Si Schottky diodes fabricated by magnetron sputtering technique

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      Author(s)
      Ocak, Y.S.
      Genisel, M.F.
      Kiliçoǧlu, T.
      Date
      2010
      Source Title
      Microelectronic Engineering
      Print ISSN
      1679317
      Volume
      87
      Issue
      11
      Pages
      2338 - 2342
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier height, ideality factor and series resistance have been calculated using current voltage (I-V) measurements. It has seen that the diodes have ideality factors more than unity and the sum of their barrier heights is 1.21 eV which is higher than the band gap of the silicon (1.12 eV). The results have been attributed the effects of inhomogeneities at the interface of the devices and native oxide layer. In addition, the barrier height values determined using capacitance-voltage (C-V) measurements have been compared the ones obtained from I-V measurements. It has seen that the interface states have strong effects on electrical properties of the diodes such as C-V and Rs-V measurements. © 2010 Elsevier Ltd. All rights reserved.
      Keywords
      Barrier height
      Schottky diodes
      Series resistance
      Sputtering
      Tantalum
      Band gaps
      Barrier heights
      Capacitance voltage measurements
      Characteristic parameter
      Current voltage
      Electrical property
      I-V measurements
      Ideality factors
      Inhomogeneities
      Interface state
      Native oxide layer
      Schottky diodes
      Series resistance
      Series resistances
      Electric properties
      Semiconducting silicon compounds
      Semiconductor diodes
      Tantalum
      Schottky barrier diodes
      Permalink
      http://hdl.handle.net/11693/22143
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.mee.2010.04.003
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