Ta/Si Schottky diodes fabricated by magnetron sputtering technique
Date
2010Source Title
Microelectronic Engineering
Print ISSN
1679317
Volume
87
Issue
11
Pages
2338 - 2342
Language
English
Type
ArticleItem Usage Stats
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Abstract
Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier height, ideality factor and series resistance have been calculated using current voltage (I-V) measurements. It has seen that the diodes have ideality factors more than unity and the sum of their barrier heights is 1.21 eV which is higher than the band gap of the silicon (1.12 eV). The results have been attributed the effects of inhomogeneities at the interface of the devices and native oxide layer. In addition, the barrier height values determined using capacitance-voltage (C-V) measurements have been compared the ones obtained from I-V measurements. It has seen that the interface states have strong effects on electrical properties of the diodes such as C-V and Rs-V measurements. © 2010 Elsevier Ltd. All rights reserved.
Keywords
Barrier heightSchottky diodes
Series resistance
Sputtering
Tantalum
Band gaps
Barrier heights
Capacitance voltage measurements
Characteristic parameter
Current voltage
Electrical property
I-V measurements
Ideality factors
Inhomogeneities
Interface state
Native oxide layer
Schottky diodes
Series resistance
Series resistances
Electric properties
Semiconducting silicon compounds
Semiconductor diodes
Tantalum
Schottky barrier diodes