• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Nanotechnology Research Center (NANOTAM)
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Nanotechnology Research Center (NANOTAM)
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Experimental study of two-step growth of thin AlN film on 4H-SiC substrate by metalorganic chemical vapor deposition

      Thumbnail
      View / Download
      521.3 Kb
      Author
      Yu H.
      Ozturk, M.
      Demirel P.
      Cakmak H.
      Buyuklimanli, T.
      Ou W.
      Özbay, Ekmel
      Date
      2010
      Source Title
      Journal of Optoelectronics and Advanced Materials
      Print ISSN
      14544164
      Volume
      12
      Issue
      12
      Pages
      2406 - 2412
      Language
      English
      Type
      Article
      Item Usage Stats
      78
      views
      36
      downloads
      Abstract
      We report growth optimizations of the thin AlN film on (0001) 4H-SiC substrates by metalorganic chemical vapor deposition. The influence of growth conditions, such as growth temperature and the V/III molar ratio, on the material quality of AlN film is studied. The surface morphology and crystalline quality of the epitaxial layers are investigated by atomic force microscope, X-ray diffraction, and transmission electronic microscope. A new approach is demonstrated to improve the crystalline quality of a 100 nm-thick AlN film by the use of a 5 nm-thick low temperature AlN nucleation layer. Compared to a conventional AlN layer directly grown on SiC substrate at high temperature, the surface morphology of two-step AlN film is remarkably improved along with a decreasing of defect density, leading to the improvement of crystalline quality for the subsequently grown GaN layer. The mechanisms of crystalline quality improvement by use of a low temperature AlN nucleation layer are also investigated and discussed.
      Keywords
      AIN
      Metalorganic CVD
      Thin film
      Permalink
      http://hdl.handle.net/11693/22119
      Collections
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      Copyright © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy