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      Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

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      Author
      Hyung Nam J.
      Alkis, S.
      Nam, D.
      Afshinmanesh F.
      Shim J.
      Park, J.
      Brongersma, M.
      Okyay, Ali Kemal
      Kamins, T.I.
      Saraswat, K.
      Date
      2015
      Source Title
      Journal of Crystal Growth
      Print ISSN
      220248
      Publisher
      Elsevier
      Volume
      416
      Pages
      21 - 27
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength. © 2015 Elsevier B.V. All rights reserved.
      Keywords
      A1. Defects
      A3. Chemical vapor deposition process
      B2. Semiconducting germanium
      B3. Infrared devices
      Chemical mechanical polishing
      Chemical polishing
      Chemical vapor deposition
      Crystalline materials
      Electromagnetic wave absorption
      Light absorption
      Monolithic integrated circuits
      Semiconducting germanium
      Silicon
      Silicon oxides
      Silicon wafers
      Transmission electron microscopy
      Chemical mechanical polishing(CMP)
      Chemical vapor deposition process
      Germanium on insulators
      Germanium-on-insulator
      Metal semiconductor metal photodetector
      Monolithic integration
      Single-crystalline
      Time-resolved photoluminescence
      Germanium
      Permalink
      http://hdl.handle.net/11693/22103
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.jcrysgro.2014.11.004
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      • Department of Electrical and Electronics Engineering 3524
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