Optically implemented broadband blueshift switch in the terahertz regime
Author
Shen, N. H.
Massaouti, M.
Gokkavas, M.
Manceau J. M.
Özbay, Ekmel
Kafesaki, M.
Koschny, T.
Tzortzakis, S.
Soukoulis, C. M.
Date
2011-01-18Source Title
Physical Review Letters
Print ISSN
0031-9007
Publisher
American Physical Society
Volume
106
Issue
3
Pages
037403-1 - 037403-4
Language
English
Type
ArticleItem Usage Stats
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Abstract
We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.
Keywords
Blue shiftCritical region
Experimental approaches
Fabricated device
Optical control
Other applications
Photoconductive semiconductors
Red shift
Resonance state
Semiconductor technology
Switchable
Terahertz
Tunabilities
Tunable device
Tunable metamaterials
Tuning ranges
Electronic equipment
Metamaterials
Semiconducting silicon compounds
Semiconductor device manufacture
Semiconducting silicon