Grain boundary related electrical transport in Al-rich AlxGa1 - xN layers grown by metal-organic chemical vapor deposition
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/22021
Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity indicated that conductivity in the films was controlled by potential barriers caused by carrier depletion at grain boundaries in the material. The Seto's grain boundary model provided a complete framework for understanding of the conductivity behavior. Various electrical parameters of the present samples such as grain boundary potential, donor concentration, surface trap density, and Debye screening length were extracted. © 2011 Pleiades Publishing, Ltd.
- Research Paper 7144