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      Grain boundary related electrical transport in Al-rich AlxGa1-xN layers grown by metal-organic chemical vapor deposition

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      Author
      Yildiz, A.
      Tasli, P.
      Sarikavak, B.
      Lisesivdin, S. B.
      Ozturk, M. K.
      Kasap, M.
      Ozcelik, S.
      Özbay, Ekmel
      Date
      2011
      Source Title
      Semiconductors
      Print ISSN
      1063-7826
      Publisher
      M A I K Nauka - Interperiodica
      Volume
      45
      Issue
      1
      Pages
      33 - 36
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity indicated that conductivity in the films was controlled by potential barriers caused by carrier depletion at grain boundaries in the material. The Seto's grain boundary model provided a complete framework for understanding of the conductivity behavior. Various electrical parameters of the present samples such as grain boundary potential, donor concentration, surface trap density, and Debye screening length were extracted.
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      http://hdl.handle.net/11693/22021
      Published Version (Please cite this version)
      http://dx.doi.org/10.1134/S1063782611010234
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      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
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