Grain boundary related electrical transport in Al-rich AlxGa1-xN layers grown by metal-organic chemical vapor deposition
Author
Yildiz, A.
Tasli, P.
Sarikavak, B.
Lisesivdin, S. B.
Ozturk, M. K.
Kasap, M.
Ozcelik, S.
Özbay, Ekmel
Date
2011Source Title
Semiconductors
Print ISSN
1063-7826
Publisher
M A I K Nauka - Interperiodica
Volume
45
Issue
1
Pages
33 - 36
Language
English
Type
ArticleItem Usage Stats
153
views
views
128
downloads
downloads
Abstract
Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity indicated that conductivity in the films was controlled by potential barriers caused by carrier depletion at grain boundaries in the material. The Seto's grain boundary model provided a complete framework for understanding of the conductivity behavior. Various electrical parameters of the present samples such as grain boundary potential, donor concentration, surface trap density, and Debye screening length were extracted.