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      Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

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      Author
      Çörekçi, S.
      Öztürk, M. K.
      Bengi, A.
      Çakmak, M.
      Özçelik, S.
      Özbay, Ekmel
      Date
      2010-10-23
      Source Title
      Journal of Materials Science
      Print ISSN
      0022-2461
      Publisher
      Springer
      Volume
      46
      Issue
      6
      Pages
      1606 - 1612
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of the layers were investigated by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) techniques. The optical quality of the thick-GaN layer was also evaluated in detail by a photoluminescence (PL) measurement. It was found that the AlN buffer layer possesses high crystal quality and an atomically flat surface with a root-mean-square (rms) roughness of 0.16 nm. The screw-and edge-type dislocation densities of the thick-GaN layer were determined as 5.4 9 107 and 5.0 9 109 cm-2 by means of the mosaic crystal model, respectively. It was observed that the GaN layer has a smooth surface with an rms of 0.84 nm. Furthermore, the dark spot density of the GaN surface was estimated as 6.5 9 108 cm-2 over a scan area of 4 μm2. © Springer Science+Business Media, LLC 2010.
      Keywords
      Atomically flat surface
      Crystal qualities
      Dark spots
      Dislocation densities
      GaN layers
      High-resolution x-ray diffraction
      Mosaic crystal model
      Optical qualities
      Photoluminescence measurements
      Root mean square roughness
      Permalink
      http://hdl.handle.net/11693/22015
      Published Version (Please cite this version)
      http://dx.doi.org/10.1007/s10853-010-4973-7
      Collections
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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