Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers
Physica B: Condensed Matter
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21975
The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear SchrdingerPoisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1-yN barrier layer and InxGa1-xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed. © 2011 Elsevier B.V. All rights reserved.
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