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      Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers

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      Author
      Kelekci, O.
      Lisesivdin, S. B.
      Ozcelik, S.
      Özbay, Ekmel
      Date
      2011-02-01
      Source Title
      Physica B: Condensed Matter
      Print ISSN
      0921-4526
      Publisher
      ELSEVIER
      Volume
      406
      Issue
      8
      Pages
      1513 - 1518
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear SchrdingerPoisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1-yN barrier layer and InxGa1-xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed.
      Keywords
      2DEG
      AlGaN/AlN/GaN
      Back barrier
      HEMT
      InGaN
      Poisson
      Schrdinger
      High electron mobility transistors
      Permalink
      http://hdl.handle.net/11693/21975
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.physb.2011.01.059
      Collections
      • Department of Electrical and Electronics Engineering 3601
      • Department of Physics 2331
      • Nanotechnology Research Center (NANOTAM) 1027
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