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      Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

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      Author(s)
      Celik O.
      Tiras, E.
      Ardali, S.
      Lisesivdin, S.B.
      Özbay, Ekmel
      Date
      2011
      Source Title
      Physica Status Solidi (C) Current Topics in Solid State Physics
      Print ISSN
      18626351
      Volume
      8
      Issue
      5
      Pages
      1625 - 1628
      Language
      English
      Type
      Article
      Item Usage Stats
      255
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      283
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      Abstract
      Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained by fitting the nonoscillatory component to a polynomial of second degree, and then subtracting it from the raw experimental data. It is shown that only first subband is occupied with electrons. The two-dimensional (2D) carrier density and the Fermi energy with respect to subband energy (EF-E1) have been determined from the periods of the SdH oscillations. The in-plane effective mass (m*) and the quantum lifetime (τq) of electrons have been obtained from the temperature and magnetic field dependencies of the SdH amplitude, respectively. The in-plane effective mass of 2D electrons is in the range between 0.19 m0 and 0.22 m0. Our results for in-plane effective mass are in good agreement with those reported in the literature © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
      Keywords
      AlGaN
      Effective mass
      Quantum lifetime
      Shubnikov de Haas
      AlGaN
      AlGaN/gaN
      Carrier density
      D electrons
      Effective mass
      Electronic transport properties
      Experimental data
      Fermi energy
      Hall resistance
      In-plane
      Magnetic field dependencies
      Nonoscillatory
      Quantum lifetime
      Quantum lifetimes
      Shubnikov-de Haas
      Sub-bands
      Subband energies
      Electric resistance
      Gallium nitride
      Magnetic fields
      Magnetoelectronics
      Magnetoresistance
      Transport properties
      Electrons
      Permalink
      http://hdl.handle.net/11693/21947
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/pssc.201000594
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Department of Physics 2485
      • Nanotechnology Research Center (NANOTAM) 1125
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