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dc.contributor.authorOznuluer, T.en_US
dc.contributor.authorPince, E.en_US
dc.contributor.authorPolat, E. O.en_US
dc.contributor.authorBalci, O.en_US
dc.contributor.authorSalihoglu, O.en_US
dc.contributor.authorKocabas, C.en_US
dc.date.accessioned2016-02-08T09:53:15Z
dc.date.available2016-02-08T09:53:15Z
dc.date.issued2011en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/21932
dc.description.abstractHere we report chemical vapor deposition of graphene on gold surface at ambient pressure. We studied effects of the growth temperature, pressure, and cooling process on the grown graphene layers. The Raman spectroscopy of the samples reveals the essential properties of the graphene grown on gold surface. In order to characterize the electrical properties of the grown graphene layers, we have transferred them on insulating substrates and fabricated field effect transistors. Owing to distinctive properties of gold, the ability to grow graphene layers on gold surface could open new applications of graphene in electrochemistry and spectroscopy. © 2011 American Institute of Physics.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3584006en_US
dc.titleSynthesis of graphene on golden_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.volumeNumber98en_US
dc.citation.issueNumber18en_US
dc.identifier.doi10.1063/1.3584006en_US
dc.publisherA I P Publishingen_US


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