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dc.contributor.authorSalihoglu, O.en_US
dc.contributor.authorKürüm, U.en_US
dc.contributor.authorYaglıoglu, G. H.en_US
dc.contributor.authorElmali, A.en_US
dc.contributor.authorAydinli, A.en_US
dc.date.accessioned2016-02-08T09:52:35Z
dc.date.available2016-02-08T09:52:35Z
dc.date.issued2011en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/21887
dc.description.abstractUltrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range of fluences from below melting to above ablation threshold. Extensive use of Raman scattering has been employed to determine post solidification features aided by scanning electron microscopy and atomic force microscopy measurements. Linewidth of the Ge optic phonon at 300 cm -1 as a function of laser fluence provides a signature for the crystallization of a-Ge. Various crystallization regimes including nanostructures in the form of nanospheres have been identified.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3601356en_US
dc.subjectAblation thresholdsen_US
dc.subjectAmorphous germaniumen_US
dc.subjectFemto-second laseren_US
dc.subjectFluencesen_US
dc.subjectLaser fluencesen_US
dc.subjectOptic phononen_US
dc.subjectUltra-fasten_US
dc.subjectAtomic force microscopyen_US
dc.subjectChemical vapor depositionen_US
dc.subjectCrystallizationen_US
dc.subjectNanospheresen_US
dc.subjectPlasma depositionen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectScanning electron microscopyen_US
dc.subjectUltrafast lasersen_US
dc.subjectUltrashort pulsesen_US
dc.subjectGermaniumen_US
dc.titleFemtosecond laser crystallization of amorphous Geen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage123108-1en_US
dc.citation.epage123108-6en_US
dc.citation.volumeNumber109en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1063/1.3601356en_US
dc.publisherAmerican Institute of Physicsen_US


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