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      Femtosecond laser crystallization of amorphous Ge

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      Author(s)
      Salihoglu, O.
      Kürüm, U.
      Yaglıoglu, G. H.
      Elmali, A.
      Aydınlı, Atilla
      Date
      2011
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Publisher
      American Institute of Physics
      Volume
      109
      Issue
      12
      Pages
      123108-1 - 123108-6
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Ultrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range of fluences from below melting to above ablation threshold. Extensive use of Raman scattering has been employed to determine post solidification features aided by scanning electron microscopy and atomic force microscopy measurements. Linewidth of the Ge optic phonon at 300 cm -1 as a function of laser fluence provides a signature for the crystallization of a-Ge. Various crystallization regimes including nanostructures in the form of nanospheres have been identified.
      Keywords
      Ablation thresholds
      Amorphous germanium
      Femto-second laser
      Fluences
      Laser fluences
      Optic phonon
      Ultra-fast
      Atomic force microscopy
      Chemical vapor deposition
      Crystallization
      Nanospheres
      Plasma deposition
      Plasma enhanced chemical vapor deposition
      Scanning electron microscopy
      Ultrafast lasers
      Ultrashort pulses
      Germanium
      Permalink
      http://hdl.handle.net/11693/21887
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.3601356
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      • Department of Physics 2485
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