Femtosecond laser crystallization of amorphous Ge
Date
2011Source Title
Journal of Applied Physics
Print ISSN
0021-8979
Publisher
American Institute of Physics
Volume
109
Issue
12
Pages
123108-1 - 123108-6
Language
English
Type
ArticleItem Usage Stats
248
views
views
243
downloads
downloads
Abstract
Ultrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range of fluences from below melting to above ablation threshold. Extensive use of Raman scattering has been employed to determine post solidification features aided by scanning electron microscopy and atomic force microscopy measurements. Linewidth of the Ge optic phonon at 300 cm -1 as a function of laser fluence provides a signature for the crystallization of a-Ge. Various crystallization regimes including nanostructures in the form of nanospheres have been identified.
Keywords
Ablation thresholdsAmorphous germanium
Femto-second laser
Fluences
Laser fluences
Optic phonon
Ultra-fast
Atomic force microscopy
Chemical vapor deposition
Crystallization
Nanospheres
Plasma deposition
Plasma enhanced chemical vapor deposition
Scanning electron microscopy
Ultrafast lasers
Ultrashort pulses
Germanium