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dc.contributor.authorMihalache V.en_US
dc.contributor.authorDede, M.en_US
dc.contributor.authorOral, A.en_US
dc.contributor.authorMiu L.en_US
dc.date.accessioned2016-02-08T09:50:50Z
dc.date.available2016-02-08T09:50:50Z
dc.date.issued2011en_US
dc.identifier.issn0921-4534
dc.identifier.urihttp://hdl.handle.net/11693/21764
dc.description.abstractThe first field for magnetic flux penetration H p in Bi 2Sr 2CaCu 2O 8+δ (Bi-2212) single crystals near the critical temperature T c was investigated from the local magnetic hysteresis loops registered for different magnetic field H sweeping rates by using a scanning Hall probe microscope (SHPM) with ∼1 μm effective spatial resolution. Evidences for a significant role of the surface barrier were obtained: the asymmetric shape of the magnetization loops and an anomalous change in the slope of H p(T) close to T c. © 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica C: Superconductivity and its Applicationsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.physc.2011.04.015en_US
dc.subjectBi-2212en_US
dc.subjectMagnetization loopsen_US
dc.subjectSHPMen_US
dc.subjectSurface barriersen_US
dc.subjectBean-Livingston surface barrieren_US
dc.subjectBi-2212en_US
dc.subjectCritical temperaturesen_US
dc.subjectDifferent-magnetic fieldsen_US
dc.subjectFlux penetrationen_US
dc.subjectMagnetic flux penetrationen_US
dc.subjectMagnetization loopsen_US
dc.subjectScanning hall probesen_US
dc.subjectSHPMen_US
dc.subjectSpatial resolutionen_US
dc.subjectSurface barrieren_US
dc.subjectSurface barriersen_US
dc.subjectSweeping rateen_US
dc.subjectDiffractive opticsen_US
dc.subjectHysteresis loopsen_US
dc.subjectMagnetic fieldsen_US
dc.subjectMagnetic fluxen_US
dc.subjectMagnetic materialsen_US
dc.subjectMagnetizationen_US
dc.subjectSingle crystalsen_US
dc.titleBean-Livingston surface barriers for flux penetration in Bi 2Sr 2CaCu 2O 8+δ single crystals near the transition temperatureen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage563en_US
dc.citation.epage565en_US
dc.citation.volumeNumber471en_US
dc.citation.issueNumber19-20en_US
dc.identifier.doi10.1016/j.physc.2011.04.015en_US


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