Bean-Livingston surface barriers for flux penetration in Bi 2Sr 2CaCu 2O 8+δ single crystals near the transition temperature
Physica C: Superconductivity and its Applications
563 - 565
Item Usage Stats
The first field for magnetic flux penetration H p in Bi 2Sr 2CaCu 2O 8+δ (Bi-2212) single crystals near the critical temperature T c was investigated from the local magnetic hysteresis loops registered for different magnetic field H sweeping rates by using a scanning Hall probe microscope (SHPM) with ∼1 μm effective spatial resolution. Evidences for a significant role of the surface barrier were obtained: the asymmetric shape of the magnetization loops and an anomalous change in the slope of H p(T) close to T c. © 2011 Elsevier B.V. All rights reserved.
Bean-Livingston surface barrier
Magnetic flux penetration
Scanning hall probes
Published Version (Please cite this version)http://dx.doi.org/10.1016/j.physc.2011.04.015
Showing items related by title, author, creator and subject.
Mihalache, V.; Dede, M.; Oral, A.; Sandu, V. (Elsevier B.V., 2008)Scanning Hall probe microscopy with an effective spatial resolution of ∼1 μm has been used to investigate the vortex structures in superconducting Bi2Sr2CaCu2O8+δ single crystals in the temperature range 77.3-81.3 K and ...
Durgun, Engin; Dag, S.; Çıracı, Salim; Gülseren, O. (American Chemical Society, 2004)The adsorption of individual atoms on the semiconducting and metallic single-walled carbon nanotubes (SWNT) has been investigated by using the first principles pseudopotential plane wave method within density functional ...
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, Ekmel (IOP Publishing, 2010-03-16)The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected ...