Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage
Date
2011Source Title
Journal of Chemical Physics
Print ISSN
0021-9606
Electronic ISSN
1089-7690
Volume
135
Issue
14
Pages
1 - 5
Language
English
Type
ArticleItem Usage Stats
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Abstract
Binding energies measured by x-ray photoelectron spectroscopy (XPS) are influenced by doping, since electrons are transferred to (p-type) and from (n-type) samples when they are introduced into the spectrometer, or brought into contact with each other (p-n junction). We show that the barely measurable Si2p binding energy difference between moderately doped n- and p-Si samples can be enhanced by photoillumination, due to reduction in surface band-bending, which otherwise screens this difference. Similar effects are also measured for samples containing oxide layers, since the band-bending at the buried oxide-Si interfaces is manifest as photovoltage shifts, although XPS does not probe the interface directly. The corresponding shift for the oxide layer of the p-Si is almost twice that of without the oxide, whereas no measurable shifts are observable for the oxide of the n-Si. These results are all related to band-bending effects and are vital in design and performance of photovoltaics and other related systems.
Keywords
Band-bending effectsBandbending
Energy differences
Oxide layer
P-n junction
P-type
Peak shift
Photo-voltage
Photoillumination
Photovoltaics
Related systems
Surface photovoltages
Binding energy
Doping (additives)
Photoelectron spectroscopy
Photons
Photovoltaic effects
Potential energy
Semiconductor junctions
Silicon
Spectrometers
X ray photoelectron spectroscopy