Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
Materials Science in Semiconductor Processing
400 - 407
Item Usage Stats
MetadataShow full item record
We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.
KeywordsAtomic layer deposition
Atomic layer deposited
Forward bias voltage
Reverse bias voltage
Current voltage characteristics
Published Version (Please cite this version)http://dx.doi.org/10.1016/j.mssp.2015.05.025
Showing items related by title, author, creator and subject.
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods Demirezen, S.; Altindal, S.; Özelik, S.; Özbay, Ekmel (Elsevier, 2011-06-08)In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ...
Altuntas, H.; Ozgit Akgun, C.; Donmez, I.; Biyikli, N. (A I P Publishing LLC, 2015)Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the ...
Nayfeh, A.; Okyay, Ali K.; El-Atab, N.; Ozcan, Ayse; Alkis, Sabri (Electrochemical Society Inc., 2014)In this work, a bottom-gate charge trapping memory device with Zinc-Oxide (ZnO) channel and 2-nm Si nanoparticles (Si-NPs) embedded in ZnO charge trapping layer is demonstrated. The active layers of the memory device are ...