Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
Date
2015Source Title
Materials Science in Semiconductor Processing
Print ISSN
1369-8001
Publisher
Elsevier Ltd
Volume
39
Pages
400 - 407
Language
English
Type
ArticleItem Usage Stats
161
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234
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Abstract
We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer
deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were
obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger
than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier
modification is very important in metal semiconductor devices. The use of an increased
barrier diode as the gate can provide an adequate barrier height for FET operation while
the decreased barrier diodes also show promise as small signal zero-bias rectifiers and
microwave. The experimental capacitance and conductance characteristics were corrected
by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range
rather than the forward bias voltage range because the phase angle in the reverse bias has
remained unchanged as 901 independent of the measurement frequency.
Keywords
Atomic layer depositionBias voltage
Capacitance
Diodes
Electric resistance
Gold
Gold deposits
Rectifying circuits
Semiconductor devices
Semiconductor diodes
Atomic layer deposited
Conductance current
Forward bias voltage
Interfacial property
Measurement frequency
Metal semiconductors
Reverse bias voltage
Series resistances
Current voltage characteristics
Permalink
http://hdl.handle.net/11693/21736Published Version (Please cite this version)
http://dx.doi.org/10.1016/j.mssp.2015.05.025Collections
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