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      Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

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      Author(s)
      Turut, A.
      Karabulut, A.
      Ejderha, K.
      Bıyıklı, Necmi
      Date
      2015
      Source Title
      Materials Science in Semiconductor Processing
      Print ISSN
      1369-8001
      Publisher
      Elsevier Ltd
      Volume
      39
      Pages
      400 - 407
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.
      Keywords
      Atomic layer deposition
      Bias voltage
      Capacitance
      Diodes
      Electric resistance
      Gold
      Gold deposits
      Rectifying circuits
      Semiconductor devices
      Semiconductor diodes
      Atomic layer deposited
      Conductance current
      Forward bias voltage
      Interfacial property
      Measurement frequency
      Metal semiconductors
      Reverse bias voltage
      Series resistances
      Current voltage characteristics
      Permalink
      http://hdl.handle.net/11693/21736
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.mssp.2015.05.025
      Collections
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
      • Nanotechnology Research Center (NANOTAM) 1063
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