Low leakage current operation of carbon nanotube network thin-film transistors at 100 degree celsius

Date
2011
Authors
Ozturk, S.
Aktas O.
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Source Title
Advanced Science Letters
Print ISSN
19366612
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Volume
4
Issue
11-12
Pages
3629 - 3632
Language
English
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Abstract

In this work we present the elevated temperature operation of carbon nanotube thin film transistors up to 100 °C in air ambient. It is demonstrated that for semiconducting nanotubes the OFF current leakage does not increase and the high ON/OFF ratio of transistors consisting of semiconducting nanotubes is preserved up to 100 °C. In addition, we investigate the factors affecting the operation of carbon nanotube transistors at high temperature for a range of source-to-drain spacing and metallic tube contents. The influence of change in tube-tube and tube-metal contact resistance on the device characteristics at high temperature is demonstrated. © 2011 American Scientific Publishers.

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