Show simple item record

dc.contributor.authorOzturk, S.en_US
dc.contributor.authorAktas O.en_US
dc.date.accessioned2016-02-08T09:50:27Z
dc.date.available2016-02-08T09:50:27Z
dc.date.issued2011en_US
dc.identifier.issn19366612
dc.identifier.urihttp://hdl.handle.net/11693/21732
dc.description.abstractIn this work we present the elevated temperature operation of carbon nanotube thin film transistors up to 100 °C in air ambient. It is demonstrated that for semiconducting nanotubes the OFF current leakage does not increase and the high ON/OFF ratio of transistors consisting of semiconducting nanotubes is preserved up to 100 °C. In addition, we investigate the factors affecting the operation of carbon nanotube transistors at high temperature for a range of source-to-drain spacing and metallic tube contents. The influence of change in tube-tube and tube-metal contact resistance on the device characteristics at high temperature is demonstrated. © 2011 American Scientific Publishers.en_US
dc.language.isoEnglishen_US
dc.source.titleAdvanced Science Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1166/asl.2011.1861en_US
dc.subjectCarbon Nanotubeen_US
dc.subjectHigh Temperature Operationen_US
dc.subjectThin-Film Transistoren_US
dc.titleLow leakage current operation of carbon nanotube network thin-film transistors at 100 degree celsiusen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage3629en_US
dc.citation.epage3632en_US
dc.citation.volumeNumber4en_US
dc.citation.issueNumber11-12en_US
dc.identifier.doi10.1166/asl.2011.1861en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record