Ge/SiGe quantum well p-i-n structures for uncooled infrared bolometers
Author
Atar, F. B.
Yesilyurt, A.
Onbasli, M. C.
Hanoglu, O.
Okyay, Ali Kemal
Date
2011-09-18Source Title
IEEE Electron Device Letters
Print ISSN
0741-3106
Publisher
IEEE
Volume
32
Issue
11
Pages
1567 - 1569
Language
English
Type
ArticleItem Usage Stats
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Abstract
The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.