Ge/SiGe quantum well P-I-N structures for uncooled infrared bolometers
Okyay, A., K.
IEEE Electron Device Letters
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21730
The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials. © 2006 IEEE.
- Research Paper