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      Ge/SiGe quantum well p-i-n structures for uncooled infrared bolometers

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      Author
      Atar, F. B.
      Yesilyurt, A.
      Onbasli, M. C.
      Hanoglu, O.
      Okyay, Ali Kemal
      Date
      2011-09-18
      Source Title
      IEEE Electron Device Letters
      Print ISSN
      0741-3106
      Publisher
      IEEE
      Volume
      32
      Issue
      11
      Pages
      1567 - 1569
      Language
      English
      Type
      Article
      Item Usage Stats
      131
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      Abstract
      The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.
      Keywords
      Bolometers
      Germanium
      Quantum wells
      Silicon
      Permalink
      http://hdl.handle.net/11693/21730
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/LED.2011.2164390
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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