Ge/SiGe quantum well p-i-n structures for uncooled infrared bolometers
Date
2011-09-18
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
IEEE Electron Device Letters
Print ISSN
0741-3106
Electronic ISSN
Publisher
IEEE
Volume
32
Issue
11
Pages
1567 - 1569
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.