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      On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods

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      Author
      Demirezen, S.
      Altindal, S.
      Özelik, S.
      Özbay, Ekmel
      Date
      2011-06-08
      Source Title
      Microelectronics Reliability
      Print ISSN
      0026-2714
      Publisher
      Elsevier
      Volume
      51
      Issue
      12
      Pages
      2153 - 2162
      Language
      English
      Type
      Article
      Item Usage Stats
      148
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      120
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      Abstract
      In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of (Ni/Au)/Al 0.22Ga0.78N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/ω-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (-5 V)-(+5 V), respectively. The voltage dependent Rs profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (σac) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C m) and conductance (Gm/ω) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of Nss and R s is confirmed to have significant effect on non-ideal I-V, C-V and G/ω-V characteristics of (Ni/Au)/Al0.22Ga0.78N/AlN/ GaN heterostructures.
      Keywords
      AC electrical conductivity
      Admittance measurements
      Admittance spectroscopies
      Capacitance voltage
      Current voltage
      Electrical characteristic
      High frequency HF
      Interface state
      Interfacial polarization
      Low frequency
      Reverse bias
      Room temperature
      Series resistances
      Voltage ranges
      Aluminum
      Capacitance
      Crystals
      Electric conductivity
      Electric resistance
      Gallium nitride
      Spectroscopic analysis
      Bias voltage
      Permalink
      http://hdl.handle.net/11693/21671
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.microrel.2011.05.010
      Collections
      • Department of Physics 2339
      • Nanotechnology Research Center (NANOTAM) 1033
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