On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods
Author
Demirezen, S.
Altindal, S.
Özelik, S.
Özbay, Ekmel
Date
2011-06-08Source Title
Microelectronics Reliability
Print ISSN
0026-2714
Publisher
Elsevier
Volume
51
Issue
12
Pages
2153 - 2162
Language
English
Type
ArticleItem Usage Stats
148
views
views
120
downloads
downloads
Abstract
In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of (Ni/Au)/Al 0.22Ga0.78N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/ω-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (-5 V)-(+5 V), respectively. The voltage dependent Rs profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (σac) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C m) and conductance (Gm/ω) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of Nss and R s is confirmed to have significant effect on non-ideal I-V, C-V and G/ω-V characteristics of (Ni/Au)/Al0.22Ga0.78N/AlN/ GaN heterostructures.
Keywords
AC electrical conductivityAdmittance measurements
Admittance spectroscopies
Capacitance voltage
Current voltage
Electrical characteristic
High frequency HF
Interface state
Interfacial polarization
Low frequency
Reverse bias
Room temperature
Series resistances
Voltage ranges
Aluminum
Capacitance
Crystals
Electric conductivity
Electric resistance
Gallium nitride
Spectroscopic analysis
Bias voltage
Permalink
http://hdl.handle.net/11693/21671Published Version (Please cite this version)
http://dx.doi.org/10.1016/j.microrel.2011.05.010Collections
Related items
Showing items related by title, author, creator and subject.
-
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
Turut, A.; Karabulut, A.; Ejderha, K.; Bıyıklı, Necmi (Elsevier Ltd, 2015)We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality ... -
Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
Altuntas, H.; Ozgit Akgun, C.; Donmez, I.; Bıyıklı, Necmi (A I P Publishing LLC, 2015)Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the ... -
2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices
El-Atab, N.; Özcan, Ayşe; Alkış, Sabri; Okyay, Ali Kemal; Nayfeh, A. (IEEE, 2014-08)In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication ...