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      Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

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      Author
      Ozgit, C.
      Donmez I.
      Alevli, M.
      Bıyıklı, Necmi
      Date
      2012
      Source Title
      Thin Solid Films
      Print ISSN
      0040-6090
      Volume
      520
      Issue
      7
      Pages
      2750 - 2755
      Language
      English
      Type
      Article
      Item Usage Stats
      176
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      Abstract
      We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ammonia (NH 3). At 185 °C, deposition rate saturated for TMA and NH 3 doses starting from 0.05 and 40 s, respectively. Saturative surface reactions between TMA and NH 3 resulted in a constant growth rate of ∼ 0.86 Å/cycle from 100 to 200 °C. Within this temperature range, film thickness increased linearly with the number of deposition cycles. At higher temperatures (≤ 225 °C) deposition rate increased with temperature. Chemical composition and bonding states of the films deposited at 185 °C were investigated by X-ray photoelectron spectroscopy. High resolution Al 2p and N 1s spectra confirmed the presence of AlN with peaks located at 73.02 and 396.07 eV, respectively. Films deposited at 185 °C were polycrystalline with a hexagonal wurtzite structure regardless of the substrate selection as determined by grazing incidence X-ray diffraction. High-resolution transmission electron microscopy images of the AlN thin films deposited on Si (100) and glass substrates revealed a microstructure consisting of nanometer sized crystallites. Films exhibited an optical band edge at ∼ 5.8 eV and an optical transmittance of > 95% in the visible region of the spectrum. © 2011 Elsevier B.V. All rights reserved.
      Keywords
      Aluminum nitride
      Atomic layer deposition
      Self-limiting growth
      Thin film
      Trimethylaluminum
      Wurtzite
      AlN
      AlN films
      AlN thin films
      Atomic layer
      Bonding state
      Chemical compositions
      Constant growth rates
      Deposition cycles
      Glass substrates
      Grazing incidence X-ray diffraction
      Hexagonal wurtzite structure
      High resolution
      Higher temperatures
      Low temperature growth
      Nanometer-sized crystallites
      Optical bands
      Plasma-enhanced atomic layer deposition
      Polycrystalline
      Si(1 0 0)
      Substrate selection
      Temperature range
      Trimethylaluminum
      Various substrates
      Visible region
      Wurtzites
      Aluminum
      Aluminum coatings
      Aluminum nitride
      Atomic layer deposition
      Atoms
      Deposition
      Deposition rates
      High resolution transmission electron microscopy
      Nitrides
      Plasma deposition
      Semiconducting silicon compounds
      Substrates
      Surface reactions
      Thin films
      Transmission electron microscopy
      Vapor deposition
      X ray diffraction
      X ray photoelectron spectroscopy
      Zinc sulfide
      Optical films
      Permalink
      http://hdl.handle.net/11693/21615
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.tsf.2011.11.081
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      • Institute of Materials Science and Nanotechnology (UNAM) 1841
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