Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
Author
Ozgit, C.
Donmez I.
Alevli, M.
Bıyıklı, Necmi
Date
2012Source Title
Thin Solid Films
Print ISSN
0040-6090
Volume
520
Issue
7
Pages
2750 - 2755
Language
English
Type
ArticleItem Usage Stats
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Abstract
We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ammonia (NH 3). At 185 °C, deposition rate saturated for TMA and NH 3 doses starting from 0.05 and 40 s, respectively. Saturative surface reactions between TMA and NH 3 resulted in a constant growth rate of ∼ 0.86 Å/cycle from 100 to 200 °C. Within this temperature range, film thickness increased linearly with the number of deposition cycles. At higher temperatures (≤ 225 °C) deposition rate increased with temperature. Chemical composition and bonding states of the films deposited at 185 °C were investigated by X-ray photoelectron spectroscopy. High resolution Al 2p and N 1s spectra confirmed the presence of AlN with peaks located at 73.02 and 396.07 eV, respectively. Films deposited at 185 °C were polycrystalline with a hexagonal wurtzite structure regardless of the substrate selection as determined by grazing incidence X-ray diffraction. High-resolution transmission electron microscopy images of the AlN thin films deposited on Si (100) and glass substrates revealed a microstructure consisting of nanometer sized crystallites. Films exhibited an optical band edge at ∼ 5.8 eV and an optical transmittance of > 95% in the visible region of the spectrum. © 2011 Elsevier B.V. All rights reserved.
Keywords
Aluminum nitrideAtomic layer deposition
Self-limiting growth
Thin film
Trimethylaluminum
Wurtzite
AlN
AlN films
AlN thin films
Atomic layer
Bonding state
Chemical compositions
Constant growth rates
Deposition cycles
Glass substrates
Grazing incidence X-ray diffraction
Hexagonal wurtzite structure
High resolution
Higher temperatures
Low temperature growth
Nanometer-sized crystallites
Optical bands
Plasma-enhanced atomic layer deposition
Polycrystalline
Si(1 0 0)
Substrate selection
Temperature range
Trimethylaluminum
Various substrates
Visible region
Wurtzites
Aluminum
Aluminum coatings
Aluminum nitride
Atomic layer deposition
Atoms
Deposition
Deposition rates
High resolution transmission electron microscopy
Nitrides
Plasma deposition
Semiconducting silicon compounds
Substrates
Surface reactions
Thin films
Transmission electron microscopy
Vapor deposition
X ray diffraction
X ray photoelectron spectroscopy
Zinc sulfide
Optical films
Permalink
http://hdl.handle.net/11693/21615Published Version (Please cite this version)
http://dx.doi.org/10.1016/j.tsf.2011.11.081Collections
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