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dc.contributor.authorAlevli, M.en_US
dc.contributor.authorOzgit, C.en_US
dc.contributor.authorDonmez, I.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2016-02-08T09:47:56Z
dc.date.available2016-02-08T09:47:56Z
dc.date.issued2012en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/21554
dc.description.abstractCrystalline aluminum nitride (AlN) films have been prepared by plasma enhanced atomic layer deposition within the temperature range of 100 and 500 °C. The AlN films were characterized by x-ray diffraction, spectroscopic ellipsometry, Fourier transform infrared spectroscopy, optical absorption, and photoluminescence. The authors establish a relationship between growth temperature and optical properties and in addition, the refractive indices of the AlN films were determined to be larger than 1.9 within the 300-1000 nm wavelength range. Infrared reflectance spectra confirmed the presence of E 1(TO) and A 1(LO) phonon modes at ∼660 cm -1 and 895 cm -1, respectively. Analysis of the absorption spectroscopy show an optical band edge between 5.78 and 5.84 eV and the absorption and photoluminescence emission properties of the AlN layers revealed defect centers in the range of 250 and 300 nm at room temperature. © 2012 American Vacuum Society.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.3687937en_US
dc.titleOptical properties of AlN thin films grown by plasma enhanced atomic layer depositionen_US
dc.typeArticleen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage021506-1en_US
dc.citation.epage021506-6en_US
dc.citation.volumeNumber30en_US
dc.citation.issueNumber2en_US
dc.identifier.doi10.1116/1.3687937en_US
dc.publisherA I P Publishing LLCen_US
dc.contributor.bilkentauthorBıyıklı, Necmi


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