• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Engineering
      • Department of Electrical and Electronics Engineering
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Engineering
      • Department of Electrical and Electronics Engineering
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Selective-area high-quality germanium growth for monolithic integrated optoelectronics

      Thumbnail
      View / Download
      256.1 Kb
      Author
      Yu, H. Y.
      Park, J. H.
      Okyay, Ali Kemal
      Saraswat, K. C.
      Date
      2012-03-02
      Source Title
      IEEE Electron Device Letters
      Print ISSN
      0741-3106
      Publisher
      Institute of Electrical and Electronics Engineers
      Volume
      33
      Issue
      4
      Pages
      579 - 581
      Language
      English
      Type
      Article
      Item Usage Stats
      141
      views
      133
      downloads
      Abstract
      Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.
      Keywords
      Area dependent
      Germanium
      Monolithic
      Optoelectronics
      Annealing cycles
      Area dependent
      High quality
      Low defect densities
      Metal-semiconductor-metal photodiodes
      Monolithic
      Multistep deposition
      Root mean squares
      Si substrates
      Threading dislocation densities
      Monolithic integrated circuits
      Optoelectronic devices
      Silicon
      Silicon compounds
      Silicon oxides
      Surface roughness
      Germanium
      Permalink
      http://hdl.handle.net/11693/21527
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/LED.2011.2181814
      Collections
      • Department of Electrical and Electronics Engineering 3597
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      Copyright © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy