Selective-area high-quality germanium growth for monolithic integrated optoelectronics
Author
Yu, H. Y.
Park, J. H.
Okyay, Ali Kemal
Saraswat, K. C.
Date
2012-03-02Source Title
IEEE Electron Device Letters
Print ISSN
0741-3106
Publisher
Institute of Electrical and Electronics Engineers
Volume
33
Issue
4
Pages
579 - 581
Language
English
Type
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Abstract
Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.
Keywords
Area dependentGermanium
Monolithic
Optoelectronics
Annealing cycles
Area dependent
High quality
Low defect densities
Metal-semiconductor-metal photodiodes
Monolithic
Multistep deposition
Root mean squares
Si substrates
Threading dislocation densities
Monolithic integrated circuits
Optoelectronic devices
Silicon
Silicon compounds
Silicon oxides
Surface roughness
Germanium