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dc.contributor.authorTansel, T.en_US
dc.contributor.authorKutluer, K.en_US
dc.contributor.authorSalihoglu, Ö.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorAslan, B.en_US
dc.contributor.authorArikan, B.en_US
dc.contributor.authorKilinc, M. C.en_US
dc.contributor.authorErgun, Y.en_US
dc.contributor.authorSerincan, U.en_US
dc.contributor.authorTuran, R.en_US
dc.date.accessioned2016-02-08T09:47:10Z
dc.date.available2016-02-08T09:47:10Z
dc.date.issued2012en_US
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/11693/21496
dc.description.abstractThe authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation layers applied to the surface of the device. The MWIR InAs/GaSb SL design structure is based on p-i-n configuration grown by the molecular beam epitaxy on a (001) n-GaSb substrate. The SiO 2-passivated SL photodiodes demonstrated a Schottky-limited noise up to a bias voltage of -0.1 V where the measured peak responsivity is 1.37 A/W with a cut-off wavelength of 4.9 μm and the specific detectivity as high as 1.23 × 10 12 cm. Hz 1/2 W , demonstrating the high quality of the fabricated MWIR SL photodiodes. The noise measurements exhibited a frequency-dependent plateau (i.e., 1/f noise) for unpassivated and Si 3N 4-passivated samples, whereas 1/f-type noise suppression (i.e., frequency-independent plateau) with a noise current reduction at about 30 Hz of more than one order of magnitude was observed for the SiO 2-passivated ones.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Photonics Technology Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LPT.2012.2188504en_US
dc.subjectInAs/GaSben_US
dc.subjectMid-wave-infrared photodiodeen_US
dc.subjectNoise characterizationen_US
dc.subjectPassivationen_US
dc.subject1/F noiseen_US
dc.subjectCutoff wavelengthsen_US
dc.subjectDesign structureen_US
dc.subjectFrequency-dependenten_US
dc.subjectGallium antimonideen_US
dc.subjectHigh qualityen_US
dc.subjectNoise suppressionen_US
dc.subjectPassivation layeren_US
dc.subjectPeak responsivityen_US
dc.subjectSpecific detectivityen_US
dc.subjectGallium alloysen_US
dc.subjectInfrared radiationen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectPhotodiodesen_US
dc.subjectSuperlatticesen_US
dc.subjectPassivationen_US
dc.titleEffect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage790en_US
dc.citation.epage792en_US
dc.citation.volumeNumber24en_US
dc.citation.issueNumber9en_US
dc.identifier.doi10.1109/LPT.2012.2188504en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorAydınlı, Atilla


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