Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
Superlattices and Microstructures
733 - 744
Item Usage Stats
MetadataShow full item record
The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T e) of hot electrons was obtained from the lattice temperature (T L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al 0.25Ga 0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures. © 2012 Elsevier Ltd. All rights reserved.
KeywordsElectron energy relaxation
Current theoretical models
Electric field dependencies
Optical phonon emission
Temperature dependent energy
Electron energy levels
Published Version (Please cite this version)http://dx.doi.org/10.1016/j.spmi.2012.03.029
Showing items related by title, author, creator and subject.
Cheng H.; Bıyıklı, Necmi; Xie J.; Kurdak Ç.; Morko̧ H. (2009)Energy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85 N/AlN/GaN and Al0.83 In0.17 N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the ...
Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Özbay, Ekmel (AIP Publishing LLC, 2013-01-25)Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic ...
Taş, Murat; Tanatar, Bilal (Wiley, 2007)We theoretically study the energy relaxation of hot electrons via LO-phonon emission in two-dimensional GaN systems. We employ a model in which electrons and the lattice are in equilibrium separately, and the effective ...