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dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorButun, S.en_US
dc.contributor.authorCaban, P.en_US
dc.contributor.authorStrupinski, W.en_US
dc.contributor.authorOzbay, E.en_US
dc.date.accessioned2016-02-08T09:46:31Z
dc.date.available2016-02-08T09:46:31Z
dc.date.issued2012-04-27en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/21450
dc.description.abstractMonolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0268-1242/27/6/065004en_US
dc.subjectAlGaNen_US
dc.subjectBack-illuminateden_US
dc.subjectMonolithically integrateden_US
dc.subjectSpectral responsivityen_US
dc.subjectThick epitaxial layersen_US
dc.subjectUltra-violet photodetectorsen_US
dc.subjectEpitaxial growthen_US
dc.subjectMonolithic integrated circuitsen_US
dc.subjectPhotodetectorsen_US
dc.titleIntegrated AlGaN quadruple-band ultraviolet photodetectorsen_US
dc.typeArticleen_US
dc.departmentNANOTAM - Nanotechnology Research Center
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentDepartment of Physics
dc.citation.spage065004-1en_US
dc.citation.epage065004-5en_US
dc.citation.volumeNumber27en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1088/0268-1242/27/6/065004en_US
dc.publisherIOP Publishingen_US


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