Integrated AlGaN quadruple-band ultraviolet photodetectors
Semiconductor Science and Technology
065004-1 - 065004-5
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21450
Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.