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      Integrated AlGaN quadruple-band ultraviolet photodetectors

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      Author(s)
      Gökkavas, M.
      Butun, S.
      Caban, P.
      Strupinski, W.
      Özbay, Ekmel
      Date
      2012-04-27
      Source Title
      Semiconductor Science and Technology
      Print ISSN
      0268-1242
      Publisher
      IOP Publishing
      Volume
      27
      Issue
      6
      Pages
      065004-1 - 065004-5
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.
      Keywords
      AlGaN
      Back-illuminated
      Monolithically integrated
      Spectral responsivity
      Thick epitaxial layers
      Ultra-violet photodetectors
      Epitaxial growth
      Monolithic integrated circuits
      Photodetectors
      Permalink
      http://hdl.handle.net/11693/21450
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/0268-1242/27/6/065004
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Department of Physics 2485
      • Nanotechnology Research Center (NANOTAM) 1125
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