Integrated AlGaN quadruple-band ultraviolet photodetectors
Date
2012-04-27Source Title
Semiconductor Science and Technology
Print ISSN
0268-1242
Publisher
IOP Publishing
Volume
27
Issue
6
Pages
065004-1 - 065004-5
Language
English
Type
ArticleItem Usage Stats
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Abstract
Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.
Keywords
AlGaNBack-illuminated
Monolithically integrated
Spectral responsivity
Thick epitaxial layers
Ultra-violet photodetectors
Epitaxial growth
Monolithic integrated circuits
Photodetectors