Synthesis of ultra-small Si / Ge semiconductor nano-particles using electrochemistry
Author
Alkis, S.
Ghaffari, M.
Okyay, Ali Kemal
Date
2012Source Title
Materials Chemistry and Physics
Print ISSN
0254-0584
Publisher
Elsevier
Volume
134
Issue
2-3
Pages
616 - 622
Language
English
Type
ArticleItem Usage Stats
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Abstract
In this paper, we describe the formation of colloidal Si/Ge semiconductor nano-particles by electrochemical etching of Ge quantum dots (GEDOT), Silicon-Germanium graded layers (GRADE) and Silicon-Germanium multi-quantum well (MQW) structures which are prepared on Silicon wafers using low pressure chemical vapor deposition (LPCVD) technique. The formation of Si/Ge nano-particles is verified by transmission electron microscope (TEM) images and photoluminescence (PL) measurements. The Si/Ge nano-particles obtained from GEDOT and GRADE structures, gave blue emissions, upon 250 nm, and 300 nm UV excitations. However, the nano-particles obtained from the MQW structure did exhibit various color emissions (orange, blue, green and red) upon excitation with 250 nm, 360 nm, 380 nm and 400 nm wavelength light.
Keywords
Electrochemical techniquesElectron microscopy (STEM, TEM, SEM)
Nanostructures
Photoluminescence spectroscopy
Blue emission
Color emission
Electrochemical techniques
Ge quantum dot
Graded layers
Multiquantum wells
Photoluminescence measurements
Si/Ge
Silicon germanium
Transmission electron microscope
Ultra-small
UV excitation
Germanium
Nanoparticles
Nanostructures
Photoluminescence spectroscopy
Semiconductor quantum dots
Silicon wafers
Transmission electron microscopy
Semiconductor quantum wells