Synthesis of ultra-small Si/Ge semiconductor nano-particles using electrochemistry
Okyay, A., K.
Materials Chemistry and Physics
616 - 622
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21434
In this paper, we describe the formation of colloidal Si/Ge semiconductor nano-particles by electrochemical etching of Ge quantum dots (GEDOT), Silicon-Germanium graded layers (GRADE) and Silicon-Germanium multi-quantum well (MQW) structures which are prepared on Silicon wafers using low pressure chemical vapor deposition (LPCVD) technique. The formation of Si/Ge nano-particles is verified by transmission electron microscope (TEM) images and photoluminescence (PL) measurements. The Si/Ge nano-particles obtained from GEDOT and GRADE structures, gave blue emissions, upon 250 nm, and 300 nm UV excitations. However, the nano-particles obtained from the MQW structure did exhibit various color emissions (orange, blue, green and red) upon excitation with 250 nm, 360 nm, 380 nm and 400 nm wavelength light. © 2012 Elsevier B.V. All rights reserved.
- Research Paper 7144