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      Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure

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      Author
      El-Atab, N.
      Rizk, A.
      Tekcan, B.
      Alkis, S.
      Okyay, Ali Kemal
      Nayfeh, A.
      Date
      2015
      Source Title
      Physica Status Solidi (A) Applications and Materials Science
      Print ISSN
      1862-6300
      Publisher
      Wiley-VCH Verlag
      Volume
      212
      Issue
      8
      Pages
      1751 - 1755
      Language
      English
      Type
      Article
      Item Usage Stats
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      91
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      Abstract
      A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer and a sputtered SiO<inf>2</inf> layer. A memory effect due to charging of the Si nanoparticles is observed using high frequency C-V measurements. The shift of the threshold voltage obtained from the hysteresis measurements is around 3.3V at 10/-10V gate voltage sweeping. The analysis of the energy band diagram of the memory structure and the negative shift of the programmed C-V curve indicate that holes are tunneling from p-type Si via Fowler-Nordheim tunneling and are being trapped in the Si nanoparticles. In addition, the structures show good endurance characteristic (>105program/erase cycles) and long retention time (>10 years), which make them promising for applications in non-volatile memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
      Keywords
      Aluminum
      Application programs
      Atomic layer deposition
      C (programming language)
      Charge trapping
      Data storage equipment
      Digital storage
      Flash memory
      Metal nanoparticles
      MOS devices
      Nanoparticles
      Semiconducting silicon
      Semiconductor lasers
      Silicon
      Silicon oxides
      Synthesis (chemical)
      Threshold voltage
      Atomic layer deposited
      Charge trapping memory
      Hysteresis measurements
      Laser process
      Metal Oxide Semiconductor structure
      Nonvolatile memory devices
      Silicon nanoparticles
      Synthesized solution
      Crystal atomic structure
      Permalink
      http://hdl.handle.net/11693/21358
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/pssa.201431802
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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