Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
Author
El-Atab, N.
Rizk, A.
Tekcan, B.
Alkis, S.
Okyay, Ali Kemal
Nayfeh, A.
Date
2015Source Title
Physica Status Solidi (A) Applications and Materials Science
Print ISSN
1862-6300
Publisher
Wiley-VCH Verlag
Volume
212
Issue
8
Pages
1751 - 1755
Language
English
Type
ArticleItem Usage Stats
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Abstract
A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer and a sputtered SiO<inf>2</inf> layer. A memory effect due to charging of the Si nanoparticles is observed using high frequency C-V measurements. The shift of the threshold voltage obtained from the hysteresis measurements is around 3.3V at 10/-10V gate voltage sweeping. The analysis of the energy band diagram of the memory structure and the negative shift of the programmed C-V curve indicate that holes are tunneling from p-type Si via Fowler-Nordheim tunneling and are being trapped in the Si nanoparticles. In addition, the structures show good endurance characteristic (>105program/erase cycles) and long retention time (>10 years), which make them promising for applications in non-volatile memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
AluminumApplication programs
Atomic layer deposition
C (programming language)
Charge trapping
Data storage equipment
Digital storage
Flash memory
Metal nanoparticles
MOS devices
Nanoparticles
Semiconducting silicon
Semiconductor lasers
Silicon
Silicon oxides
Synthesis (chemical)
Threshold voltage
Atomic layer deposited
Charge trapping memory
Hysteresis measurements
Laser process
Metal Oxide Semiconductor structure
Nonvolatile memory devices
Silicon nanoparticles
Synthesized solution
Crystal atomic structure