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dc.contributor.authorSalihoglu, O.en_US
dc.contributor.authorMuti, A.en_US
dc.contributor.authorKutluer, K.en_US
dc.contributor.authorTansel, T.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorAydinli, A.en_US
dc.date.accessioned2016-02-08T09:44:50Z
dc.date.available2016-02-08T09:44:50Z
dc.date.issued2012en_US
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/11693/21328
dc.description.abstractWe report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and optical performances. For ODT-coated diodes, the dark current density was improved by two orders of magnitude at 77K under 100mV bias. The zero bias responsivity and detectivity were 1.04AW 1 and 2.15 × 10 13 Jones, respectively, at 4μm and 77K. The quantum efficiency was determined to be 37% for a cutoff wavelength of 5.1μm.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Physics D : Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0022-3727/45/36/365102en_US
dc.subjectAgeing effectsen_US
dc.subjectCutoff wavelengthsen_US
dc.subjectDetectivityen_US
dc.subjectInAs/GaSben_US
dc.subjectInAs/GaSb superlatticesen_US
dc.subjectMolecular chainsen_US
dc.subjectOctadecanethiolen_US
dc.subjectOptical performanceen_US
dc.subjectOrders of magnitudeen_US
dc.subjectResponsivityen_US
dc.subjectSelf-assemblingen_US
dc.subjectSulfur atomsen_US
dc.subjectZero biasen_US
dc.subjectDiodesen_US
dc.subjectIndium antimonidesen_US
dc.subjectPhotodetectorsen_US
dc.subjectSelf assembled monolayersen_US
dc.subjectSulfuren_US
dc.subjectSulfur compoundsen_US
dc.subjectOrganic polymersen_US
dc.titleSkin-like self-assembled monolayers on InAs / GaSb superlattice photodetectorsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage365102-1en_US
dc.citation.epage365102-5en_US
dc.citation.volumeNumber45en_US
dc.citation.issueNumber36en_US
dc.identifier.doi10.1088/0022-3727/45/36/365102en_US
dc.publisherIOP Institute of Physics Publishingen_US
dc.identifier.eissn1361-6463


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