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      Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors

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      Author
      Salihoglu, O.
      Muti, A.
      Kutluer, K.
      Tansel, T.
      Turan, R.
      Aydınlı, Atilla
      Date
      2012
      Source Title
      Journal of Physics D : Applied Physics
      Print ISSN
      0022-3727
      Electronic ISSN
      1361-6463
      Publisher
      IOP Institute of Physics Publishing
      Volume
      45
      Issue
      36
      Pages
      365102-1 - 365102-5
      Language
      English
      Type
      Article
      Item Usage Stats
      145
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      Abstract
      We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and optical performances. For ODT-coated diodes, the dark current density was improved by two orders of magnitude at 77K under 100mV bias. The zero bias responsivity and detectivity were 1.04AW 1 and 2.15 × 10 13 Jones, respectively, at 4μm and 77K. The quantum efficiency was determined to be 37% for a cutoff wavelength of 5.1μm.
      Keywords
      Ageing effects
      Cutoff wavelengths
      Detectivity
      InAs/GaSb
      InAs/GaSb superlattices
      Molecular chains
      Octadecanethiol
      Optical performance
      Orders of magnitude
      Responsivity
      Self-assembling
      Sulfur atoms
      Zero bias
      Diodes
      Indium antimonides
      Photodetectors
      Self assembled monolayers
      Sulfur
      Sulfur compounds
      Organic polymers
      Permalink
      http://hdl.handle.net/11693/21328
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/0022-3727/45/36/365102
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