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      Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

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      Author
      Kelekci, O.
      Tasli, P.
      Cetin, S. S.
      Kasap, M.
      Ozcelik, S.
      Özbay, Ekmel
      Date
      2012-06-01
      Source Title
      Current Applied Physics
      Print ISSN
      1567-1739
      Publisher
      ELSEVIER
      Volume
      12
      Issue
      6
      Pages
      1600 - 1605
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested Al xIn 1 -xN/AlN/GaN/Al 0.04Ga 0.96N heterostructures when compared to the standard Al xIn 1 -xN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al 0.04Ga 0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the Al xIn 1-xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible.
      Keywords
      Electrical transport
      Electronic band structure
      Nitride materials
      Permalink
      http://hdl.handle.net/11693/21283
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.cap.2012.05.040
      Collections
      • Department of Electrical and Electronics Engineering 3614
      • Department of Physics 2352
      • Nanotechnology Research Center (NANOTAM) 1039
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