Thin-film ZnO charge-trapping memory cell grown in a single ALD step
IEEE Electron Device Letters
Institute of Electrical and Electronics Engineers
1714 - 1716
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A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V · s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the $I\rm drain- $V\rm gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.
KeywordsAtomic layer deposition (ALD)
Thin-film transistor (TFT)
Charge trapping memories
Thin-film transistor (TFTs)
Atomic layer deposition
Thin film devices
Thin film transistors
Published Version (Please cite this version)http://dx.doi.org/10.1109/LED.2012.2219493
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