Thin-film ZnO charge-trapping memory cell grown in a single ALD step
IEEE Electron Device Letters
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21253
A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V · s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the $I\rm drain- $V\rm gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics. © 1980-2012 IEEE.
- Research Paper 7144
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