Thin-film ZnO charge-trapping memory cell grown in a single ALD step
Okyay, A., K.
IEEE Electron Device Letters
1714 - 1716
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21253
A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V · s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the $I\rm drain- $V\rm gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics. © 1980-2012 IEEE.
Showing items related by title, author, creator and subject.
Michaelian, K. (2012)Clark and Chalmers (1998) claim that an external resource satisfying the following criteria counts as a memory: (1) the agent has constant access to the resource; (2) the information in the resource is directly available; ...
Ozturk O. (2011)Memory is a key parameter in embedded systems since both code complexity of embedded applications and amount of data they process are increasing. While it is true that the memory capacity of embedded systems is continuously ...
Ozturk O.; Kandemir, M.; Irwin, M.J. (2009)The memory system presents one of the critical challenges in embedded system design and optimization. This is mainly due to the ever-increasing code complexity of embedded applications and the exponential increase seen in ...