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      Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

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      Author
      Ji Y.
      Zhang, Z. -H.
      Tan S.T.
      Ju, Z. G.
      Kyaw, Z.
      Hasanov N.
      Liu W.
      Sun X. W.
      Demir, Hilmi Volkan
      Date
      2013
      Source Title
      Optics Letters
      Print ISSN
      0146-9592
      Publisher
      Optical Society of America
      Volume
      38
      Issue
      2
      Pages
      202 - 204
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. © 2013 Optical Society of America.
      Keywords
      Active regions
      Dual wavelength
      Forward voltage
      High currents
      Hole distribution
      Hole transports
      InGaN/GaN
      Injection levels
      Light generation
      Mg-doping
      P-type
      Quantum barriers
      Radiative recombination
      Band structure
      Gallium nitride
      Hole mobility
      Numerical analysis
      Semiconductor quantum wells
      Light emitting diodes
      Permalink
      http://hdl.handle.net/11693/21111
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OL.38.000202
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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