Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
Author
Ji Y.
Zhang, Z. -H.
Tan S.T.
Ju, Z. G.
Kyaw, Z.
Hasanov N.
Liu W.
Sun X. W.
Demir, Hilmi Volkan
Date
2013Source Title
Optics Letters
Print ISSN
0146-9592
Publisher
Optical Society of America
Volume
38
Issue
2
Pages
202 - 204
Language
English
Type
ArticleItem Usage Stats
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Abstract
We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. © 2013 Optical Society of America.
Keywords
Active regionsDual wavelength
Forward voltage
High currents
Hole distribution
Hole transports
InGaN/GaN
Injection levels
Light generation
Mg-doping
P-type
Quantum barriers
Radiative recombination
Band structure
Gallium nitride
Hole mobility
Numerical analysis
Semiconductor quantum wells
Light emitting diodes