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      Effective mass of electron in monolayer graphene: Electron-phonon interaction

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      Author
      Tiras, E.
      Ardali, S.
      Tiras, T.
      Arslan, E.
      Cakmakyapan, S.
      Kazar, O.
      Hassan, J.
      Janzén, E.
      Özbay, Ekmel
      Date
      2013-01-25
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Publisher
      AIP Publishing LLC
      Volume
      113
      Issue
      4
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.
      Keywords
      Acoustic phonons
      Effective mass
      Electric field dependencies
      Electron energies
      Electronic transport properties
      Energy relaxation
      Hall effect measurement
      Lattice temperatures
      Number of layers
      Power-losses
      Shubnikov-de Haas
      SiC substrates
      Temperature dependence
      Temperature dependencies
      Temperature range
      Electric fields
      Electron temperature
      Monolayers
      Raman spectroscopy
      Semiconducting indium compounds
      Silicon carbide
      Transport properties
      Graphene
      Permalink
      http://hdl.handle.net/11693/21109
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4789385
      Collections
      • Department of Electrical and Electronics Engineering 3601
      • Department of Physics 2331
      • Nanotechnology Research Center (NANOTAM) 1027
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