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dc.contributor.authorSalihoglu, O.en_US
dc.contributor.authorHostut M.en_US
dc.contributor.authorTansel, T.en_US
dc.contributor.authorKutluer, K.en_US
dc.contributor.authorKilic A.en_US
dc.contributor.authorAlyoruk, M.en_US
dc.contributor.authorSevik, C.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorErgun, Y.en_US
dc.contributor.authorAydinli, A.en_US
dc.date.accessioned2016-02-08T09:41:17Z
dc.date.available2016-02-08T09:41:17Z
dc.date.issued2013en_US
dc.identifier.issn1350-4495
dc.identifier.urihttp://hdl.handle.net/11693/21108
dc.description.abstractWe report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier pushes the electron and hole wavefunctions towards the layer edges and under bias, increases the overlap integral by about 25% leading to higher detectivity. InAs/AlSb/GaSb superlattices were studied with density functional theory. Both AlAs and InSb interfaces were taken into account by calculating the heavy hole-light hole (HH-LH) splittings. Experiments were carried out on single pixel photodiodes by measuring electrical and optical performance. With cut-off wavelength of 4.2 μm at 120 K, temperature dependent dark current and detectivity measurements show that the dark current is 2.5 × 10 -9 A under zero bias with corresponding R0A resistance of 1.5 × 104 Ω cm2 for the 500 × 500 μm2 single pixel square photodetectors. Photodetector reaches BLIP condition at 125 K with the BLIP detectivity (DBLIP) of 2.6 × 10 10 Jones under 300 K background and -0.3 V bias voltage. © 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoEnglishen_US
dc.source.titleInfrared Physics and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.infrared.2012.12.007en_US
dc.subjectBarrier designen_US
dc.subjectInfrared detectoren_US
dc.subjectMWIR photodetectoren_US
dc.subjectN structureen_US
dc.subjectSiO2 passivationen_US
dc.subjectSuperlatticeen_US
dc.subjectBarrier designen_US
dc.subjectCutoff wavelengthsen_US
dc.subjectElectronic and optical propertiesen_US
dc.subjectHole wave functionsen_US
dc.subjectOptical performanceen_US
dc.subjectOverlap integralsen_US
dc.subjectTemperature dependenten_US
dc.subjectType-II superlatticesen_US
dc.subjectChemical bondsen_US
dc.subjectDensity functional theoryen_US
dc.subjectInfrared detectorsen_US
dc.subjectMolecular orbitalsen_US
dc.subjectOptical propertiesen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotodiodesen_US
dc.subjectPhotonsen_US
dc.subjectPixelsen_US
dc.subjectSuperlatticesen_US
dc.subjectWave functionsen_US
dc.subjectStructural designen_US
dc.titleElectronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectorsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage36en_US
dc.citation.epage40en_US
dc.citation.volumeNumber59en_US
dc.identifier.doi10.1016/j.infrared.2012.12.007en_US
dc.publisherElsevieren_US


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