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      Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors

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      Author
      Salihoglu, O.
      Hostut M.
      Tansel, T.
      Kutluer, K.
      Kilic A.
      Alyoruk, M.
      Sevik, C.
      Turan, R.
      Ergun, Y.
      Aydınlı, Atilla
      Date
      2013
      Source Title
      Infrared Physics and Technology
      Print ISSN
      1350-4495
      Publisher
      Elsevier
      Volume
      59
      Pages
      36 - 40
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier pushes the electron and hole wavefunctions towards the layer edges and under bias, increases the overlap integral by about 25% leading to higher detectivity. InAs/AlSb/GaSb superlattices were studied with density functional theory. Both AlAs and InSb interfaces were taken into account by calculating the heavy hole-light hole (HH-LH) splittings. Experiments were carried out on single pixel photodiodes by measuring electrical and optical performance. With cut-off wavelength of 4.2 μm at 120 K, temperature dependent dark current and detectivity measurements show that the dark current is 2.5 × 10 -9 A under zero bias with corresponding R0A resistance of 1.5 × 104 Ω cm2 for the 500 × 500 μm2 single pixel square photodetectors. Photodetector reaches BLIP condition at 125 K with the BLIP detectivity (DBLIP) of 2.6 × 10 10 Jones under 300 K background and -0.3 V bias voltage. © 2012 Elsevier B.V. All rights reserved.
      Keywords
      Barrier design
      Infrared detector
      MWIR photodetector
      N structure
      SiO2 passivation
      Superlattice
      Barrier design
      Cutoff wavelengths
      Electronic and optical properties
      Hole wave functions
      Optical performance
      Overlap integrals
      Temperature dependent
      Type-II superlattices
      Chemical bonds
      Density functional theory
      Infrared detectors
      Molecular orbitals
      Optical properties
      Photodetectors
      Photodiodes
      Photons
      Pixels
      Superlattices
      Wave functions
      Structural design
      Permalink
      http://hdl.handle.net/11693/21108
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.infrared.2012.12.007
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