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dc.contributor.authorİslamoǧlu, S.en_US
dc.contributor.authorOktel, M. Ö.en_US
dc.contributor.authorGülseren, O.en_US
dc.date.accessioned2016-02-08T09:40:54Z
dc.date.available2016-02-08T09:40:54Z
dc.date.issued2013en_US
dc.identifier.issn0953-8984
dc.identifier.urihttp://hdl.handle.net/11693/21083
dc.description.abstractWe investigate the Hall conductance of graphene with point defects within the Kubo formalism, which allows us to calculate the Hall conductance without constraining the Fermi energy to lie in a gap. For pure graphene, which we model using a tight-binding Hamiltonian, we recover both the usual and the anomalous integer quantum Hall effects depending on the proximity to the Dirac points. We investigate the effect of point defects on Hall conduction by considering a dilute but regular array of point defects incorporated into the graphene lattice. We extend our calculations to include next nearest neighbor hopping, which breaks the bipartite symmetry of the lattice. We find that impurity atoms which are weakly coupled to the rest of the lattice result in gradual disappearance of the high conductance value plateaus. For such impurities, especially for vacancies which are decoupled from the lattice, strong modification of the Hall conductance occurs near the E = 0 eV line, as impurity states are highly localized. In contrast, if the impurities are strongly coupled, they create additional Hall conductance plateaus at the extremum values of the spectrum, signifying separate impurity bands. Hall conductance values within the original spectrum are not strongly modified.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Physics Condensed Matteren_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0953-8984/25/5/055302en_US
dc.subjectConductance valuesen_US
dc.subjectDirac pointen_US
dc.subjectGraphene latticesen_US
dc.subjectHall conductanceen_US
dc.subjectImpurity atomsen_US
dc.subjectImpurity bandsen_US
dc.subjectImpurity stateen_US
dc.subjectNearest neighbor hoppingen_US
dc.subjectRegular arrayen_US
dc.subjectTight-binding Hamiltoniansen_US
dc.subjectImpuritiesen_US
dc.subjectPoint defectsen_US
dc.subjectQuantum Hall effecten_US
dc.subjectGrapheneen_US
dc.titleHall conductance in graphene with point defectsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage1en_US
dc.citation.epage10en_US
dc.citation.volumeNumber25en_US
dc.citation.issueNumber5en_US
dc.identifier.doi10.1088/0953-8984/25/5/055302en_US
dc.identifier.eissn1361-648X


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