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dc.contributor.authorTansel, T.en_US
dc.contributor.authorKutluer, K.en_US
dc.contributor.authorMuti, A.en_US
dc.contributor.authorSalihoglu, Ö.en_US
dc.contributor.authorAydinli, A.en_US
dc.contributor.authorTuran, R.en_US
dc.date.accessioned2016-02-08T09:40:27Z
dc.date.available2016-02-08T09:40:27Z
dc.date.issued2013en_US
dc.identifier.issn1882-0778
dc.identifier.urihttp://hdl.handle.net/11693/21062
dc.description.abstractThe standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation energies below 60meV and is inversely proportional to the reverse bias. In order to satisfactorily explain the experimental data, we hereby propose the existence of a surface recombination noise that is a function of both the frequency and bias. The calculated noise characteristics indeed show good agreement with the experimental data.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Expressen_US
dc.relation.isversionofhttp://dx.doi.org/10.7567/APEX.6.032202en_US
dc.subjectExperimental datumen_US
dc.subjectInAs/GaSb superlatticesen_US
dc.subjectNegative biasen_US
dc.subjectNoise characteristicen_US
dc.subjectNoise mechanismsen_US
dc.subjectReverse biasen_US
dc.subjectSurface activationen_US
dc.subjectSurface recombinationsen_US
dc.subjectActivation energyen_US
dc.subjectIndium antimonidesen_US
dc.subjectSuperlatticesen_US
dc.titleSurface recombination noise in InAs / GaSb superlattice photodiodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.volumeNumber6en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.7567/APEX.6.032202en_US
dc.publisherIOP Institute of Physics Publishingen_US
dc.identifier.eissn1882-0786


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