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dc.contributor.authorCaliskan, D.en_US
dc.contributor.authorSezen H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorSuzer, S.en_US
dc.date.accessioned2016-02-08T09:40:02Z
dc.date.available2016-02-08T09:40:02Z
dc.date.issued2015en_US
dc.identifier.issn20452322
dc.identifier.urihttp://hdl.handle.net/11693/21037
dc.description.abstractWe report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.en_US
dc.language.isoEnglishen_US
dc.source.titleScientific Reportsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1038/srep14091en_US
dc.titleChemical Visualization of a GaN p-n junction by XPSen_US
dc.typeArticleen_US
dc.departmentNANOTAM - Nanotechnology Research Center
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentDepartment of Physics
dc.departmentDepartment of Chemistry
dc.citation.volumeNumber5en_US
dc.identifier.doi10.1038/srep14091en_US
dc.publisherNature Publishing Groupen_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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