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      Chemical Visualization of a GaN p-n junction by XPS

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      Author(s)
      Caliskan, D.
      Sezen H.
      Özbay, Ekmel
      Süzer, Şefik
      Date
      2015
      Source Title
      Scientific Reports
      Print ISSN
      20452322
      Publisher
      Nature Publishing Group
      Volume
      5
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.
      Permalink
      http://hdl.handle.net/11693/21037
      Published Version (Please cite this version)
      http://dx.doi.org/10.1038/srep14091
      Collections
      • Department of Chemistry 640
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
      • Nanotechnology Research Center (NANOTAM) 1063
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