Chemical Visualization of a GaN p-n junction by XPS

Date
2015
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Source Title
Scientific Reports
Print ISSN
20452322
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Nature Publishing Group
Volume
5
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Language
English
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Abstract

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.

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Published Version (Please cite this version)