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      Dynamic control of photoresponse in ZnO-based thin-film transistors in the visible spectrum

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      Author
      Aygun, L. E.
      Oruc, F. B.
      Atar, F. B.
      Okyay, Ali Kemal
      Date
      2013-04
      Source Title
      IEEE Photonics Journal
      Print ISSN
      1943-0655
      Publisher
      IEEE
      Volume
      5
      Issue
      2
      Language
      English
      Type
      Article
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      Abstract
      We present ZnO-channel thin-film transistors with actively tunable photocurrent in the visible spectrum, although ZnO band edge is in the ultraviolet. ZnO channel is deposited by atomic layer deposition technique at a low temperature (80), which is known to introduce deep level traps within the forbidden band of ZnO. The gate bias dynamically modifies the occupancy probability of these trap states by controlling the depletion region in the ZnO channel. Unoccupied trap states enable the absorption of the photons with lower energies than the bandgap of ZnO. Photoresponse to visible light is controlled by the applied voltage bias at the gate terminal. © 2009-2012 IEEE.
      Keywords
      Defects
      Metal oxide
      Optoelectronic materials
      Oxide materials
      Phototransistor
      TFT
      Transparent oxide
      Traps
      Tunable
      Visible
      Metal oxides
      Opto-electronic materials
      Permalink
      http://hdl.handle.net/11693/21027
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/JPHOT.2013.2250274
      Collections
      • Department of Electrical and Electronics Engineering 3597
      • Institute of Materials Science and Nanotechnology (UNAM) 1831
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