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dc.contributor.authorCinel, N. A.en_US
dc.contributor.authorCakmakyapan, S.en_US
dc.contributor.authorErtas, G.en_US
dc.contributor.authorOzbay, E.en_US
dc.date.accessioned2016-02-08T09:38:45Z
dc.date.available2016-02-08T09:38:45Z
dc.date.issued2013en_US
dc.identifier.issn1077-260X
dc.identifier.urihttp://hdl.handle.net/11693/20964
dc.description.abstractPlasmonic nanopatterned structures that can work as highly efficient surface-enhanced Raman scattering (SERS) substrates are presented in this study. A 'coupled' concentric ring structure has been designed, fabricated, tuned, and compared to an 'etched' concentric ring structure and plain gold film via SERS experiments. The proposed design gives Raman signal intensity 630 times larger than plain gold film and 8 times larger than an 'etched' concentric ring structure. The surface plasmons were imaged with the fluorescence imaging technique and supporting numerical simulations were done.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Journal on Selected Topics in Quantum Electronicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JSTQE.2012.2235824en_US
dc.subjectConcentric ringen_US
dc.subjectFluorescence imagingen_US
dc.subjectSurface plasmon (SP)en_US
dc.subjectSurface-enhanced Raman spectroscopy (SERS)en_US
dc.subjectConcentric ring structuresen_US
dc.subjectConcentric ringsen_US
dc.subjectFluorescence imagingen_US
dc.subjectRaman signal intensityen_US
dc.subjectSERS substrateen_US
dc.subjectSurface enhanced Raman Scattering (SERS)en_US
dc.subjectSurface enhanced Raman spectroscopyen_US
dc.subjectSurface plasmonsen_US
dc.subjectFluorescenceen_US
dc.subjectGolden_US
dc.subjectImaging techniquesen_US
dc.subjectMetallic filmsen_US
dc.subjectPlasmonsen_US
dc.subjectRaman spectroscopyen_US
dc.subjectSurface scatteringen_US
dc.subjectSubstratesen_US
dc.titleConcentric ring structures as efficient SERS substratesen_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center - NANOTAM
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentDepartment of Chemistry
dc.citation.spage1en_US
dc.citation.epage5en_US
dc.citation.volumeNumber19en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1109/JSTQE.2012.2235824en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US


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