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dc.contributor.authorAvramova, I.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.contributor.authorGuergova, D.en_US
dc.contributor.authorStoychev, D.en_US
dc.contributor.authorStefanov, P.en_US
dc.date.accessioned2016-02-08T09:38:27Z
dc.date.available2016-02-08T09:38:27Z
dc.date.issued2013en_US
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/11693/20946
dc.description.abstractThe CeOx/Al2O3 thin films on stainless steel with different ceria loading were subjected to a.c. (square wave) pulses at various frequencies in the range 10- 3 to 100 kHz while recording X-ray photoelectron spectra. The resulting binding energy differences were derived from the frequency dependence of the corresponding Al2p, Ce3d and O1s peaks. At low ceria loadings the main constituent on the surface is CeAlO 3 phase, while for high ceria loading the film is constructed from CeO2 and CeAlO3 phases spread over the Al 2O3. Accordingly, it was observed that the ceria loading determines the conductivities of the investigated thin oxide films.en_US
dc.language.isoEnglishen_US
dc.source.titleThin Solid Filmsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.tsf.2013.03.049en_US
dc.subjectDynamical X-ray photoelectron spectroscopyen_US
dc.subjectElectrochemical depositionen_US
dc.subjectMixed oxide surfacesen_US
dc.titleCeOx/Al2O3 thin films on stainless steel substrate-dynamical X-ray photoelectron spectroscopy investigationsen_US
dc.typeArticleen_US
dc.departmentDepartment of Chemistryen_US
dc.citation.spage63en_US
dc.citation.epage67en_US
dc.citation.volumeNumber536en_US
dc.identifier.doi10.1016/j.tsf.2013.03.049en_US
dc.publisherElsevieren_US
dc.contributor.bilkentauthorSüzer, Şefik
dc.identifier.eissn1879-2731


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