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      Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

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      Author
      Çörekçi, S.
      Öztürk, M. K.
      Yu, H.
      Çakmak, M.
      Özçelik, S.
      Özbay, Ekmel
      Date
      2013
      Source Title
      Semiconductors
      Print ISSN
      1063-7826
      Publisher
      Pleiades Publishing
      Volume
      47
      Issue
      6
      Pages
      820 - 824
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 108 cm-2. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.
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      http://hdl.handle.net/11693/20942
      Published Version (Please cite this version)
      http://dx.doi.org/10.1134/S1063782613060080
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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