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dc.contributor.authorÇopuroğlu, M.en_US
dc.contributor.authorSezen, H.en_US
dc.contributor.authorOpila, R. L.en_US
dc.contributor.authorSuzer, S.en_US
dc.date.accessioned2016-02-08T09:38:02Z
dc.date.available2016-02-08T09:38:02Z
dc.date.issued2013en_US
dc.identifier.issn1944-8244
dc.identifier.urihttp://hdl.handle.net/11693/20920
dc.description.abstractX-ray photoelectron spectroscopy is used to probe the photoinduced shifts in the binding energies of Si2p, O1s, and C1s of the SiO2/Si interfaces of a number of samples having oxide and/or thin organic layers on top of p- and n-Si wafers. Whereas the photoinduced shifts, in each and every peak related, vary from 0.2 to 0.5 eV for the p-type samples, the corresponding shifts are substantially smaller (<0.1 eV) for the n-type, regardless of (i) oxidation route (thermal or anodic), (ii) thickness of oxide layer, (iii) nature of organic layer, or (iv) color of three illuminating sources we have used. This leads us to conclude that these particular photoshifts reflect the charge state of the SiO2/Si interface, even in the case of a 20 nm thick oxide, where the interface is buried and cannot be probed directly by XPS.en_US
dc.language.isoEnglishen_US
dc.source.titleACS Applied Materials and Interfacesen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/am401696een_US
dc.subjectBand-bendingen_US
dc.subjectBuried interfaceen_US
dc.subjectDopingen_US
dc.subjectPhotovoltageen_US
dc.subjectXPSen_US
dc.titleBand-Bending at buried SiO2/Si interface as probed by XPSen_US
dc.typeArticleen_US
dc.departmentDepartment of Chemistryen_US
dc.citation.spage5875en_US
dc.citation.epage5881en_US
dc.citation.volumeNumber5en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1021/am401696een_US
dc.publisherAmerican Chemical Societyen_US
dc.identifier.eissn1944-8252


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